unisonic technologies co., ltd 5N25Z preliminar y power m o sfet www.unisonic.com.tw 1 of 6 copyright ? 2014 unisonic technologies co., ltd qw-r502-853.b 3.8a, 250v n-channel mosfet ? descripti on t he u t c 5n25 z is an n-cha n nel e nha ncem ent mosf et , i t uses ut c?s advanc ed techn o lo g y to provid e customers w i th a minimu m on-state resistance, hig h s w i t ch ing spe ed and lo w gate charg e . it can also w i t h stand hig h e nerg y pu lse i n the avala n c he and commutatio n modes. t h e ut c 5N25Z is suitable for high efficie n c y s w itchi ng d c /dc converter, mot o r control a nd s w itc h mod e p o w e r su ppl y. ? features * r ds (on) <1 .2 ? @ v gs = 10v * lo w g a te cha r ge ( t y p= 14 n c ) * lo w c r ss ( t y p= 6.0pf ) * high s w itc h in g spee d * esd cap abi li t y ? sy mbol ? or de r i ng i n form at i o n ordering n u m ber package pi n assi gn me nt packing lead free halogen free 1 2 3 5N25Zl-tn3-t 5N25Zg-tn3-t to-252 g d s tube 5N25Zl-tn3-r 5N25Zg-tn3-r to-252 g d s tape reel note: pin assignment: g: gate d: drain s: source http://
5N25Z preliminar y power m o sfet unisonic technologi es co., ltd 2 of 6 w w w . uniso nic.co m.t w q w - r 5 0 2 - 8 5 3 . b ? absolute maxi mu m ra ting s (t c = 25c, unle ss other w i s e n o ted) paramet er symbol rat i ngs unit drain-s ource voltag e v ds s 250 v gate-source voltage v gss 20 v drain c u rrent contin uo us i d 3.8 a pulse d (note 2 ) i dm 9 a avala n che c u r r ent (note 2) i ar 3.8 a avalanche energy singl e puls ed ( note 3) e as 60 mj repetitiv e (not e 2) e ar 3.7 mj peak di ode r e cover y dv/dt (n ote 4) dv/dt 5.5 v/ns power dissipation t a = 25c p d 2.5 w t c = 25c 37 w derate a bove 25c 0.29 w/c junctio n t e mperature t j -55~ +150 c storage t e mperature r ang e t st g -55~ +150 c note: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitiv e rati ng: pulse w i dth lim ited b y ma ximum juncti on t e mperat ure. 3. l= 6.2mh, i as = 3 .8a, v dd = 50v , r g =25 ? , starting t j = 25c. 4. i sd 4.5a, di/dt 300a/s, v dd bv ds s , starting t j = 25c. ? th er mal char ac teri stic s paramet er symbol rat i ngs unit junctio n to ambient ja 110 c/w junction to case jc 3.4 c/w
5N25Z preliminar y power m o sfe unisonic technologi es co., ltd 3 of 6 w w w . uniso nic.co m.t w q w - r 5 0 2 - 8 5 3 . b ? electric al ch ara cteri s tic s (t c = 25c, unless oth e r w is e noted) parameter symbol test conditions min typ max unit off characteristics drain-s ource breakd o w n vo l t age bv ds s i d = 250a, v gs = 0 v 250 v breakd o w n voltag e t e mperature coefficient bv ds s /t j reference to 25c, i d =250a 0.18 v/c drain-s ource l eaka ge curr en t i ds s v ds = 250v, v gs = 0 v 1 a gate-source l eaka ge curr en t fo rw ard i gss v gs = + 20v, v ds =0 v +1 0 a reverse v gs = - 20v, v ds =0 v -1 0 a on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d = 250a 2 4 v static drain-s ource on-stat e resistanc e (note 1) r ds (on) v gs = 10v, i d = 1 .9a 0.78 1.2 ? v gs =5v, i d =1.9a 0.92 1.25 ? forward transconductance g fs v ds =30v, i d =1.9a 3.35 s dynamic parameters input cap a cita nce c iss v gs =0v, v ds =25v, f=1.0mhz 250 325 pf output capac itance c oss 40 50 pf reverse transfer capacitance c rss 6 8 pf switching parameters t o tal gate charge q g v gs = 10v, v ds =30v, i d =1 .3 a, i g =100a (note 1, 2) 14 20 nc gate to source charge q gs 4 nc gate to drain charge q gd 2.7 nc turn-on delay time t d ( on ) v dd = 30v, i d =0.5a, r g =2 5 ? , v gs =10v (note 1, 2) 30 35 ns rise t i me t r 26 40 ns turn-off delay time t d ( off ) 90 110 ns fall-time t f 27 40 ns source- drain diode ratings and characteristics maximum bod y -d iod e conti n uous c u rrent i s 3.8 a maximum body -diode puls ed current i sm 9 a drain-s ource diod e f o r w ard voltage v sd i s =3.8a, v gs =0 v 1 . 5 v bod y di ode r e verse rec o ver y t i me t rr i s =4.5a, v gs =0 v, d i f /dt= 100a/s (note 1) 95 ns bod y di ode r e verse rec o ver y ch arg e q rr 0.3 c notes: 1. pulse test: pulse width 300s, duty cycle 2% 2. essentially independent of operating temperature
5N25Z preliminar y power m o sfe unisonic technologi es co., ltd 4 of 6 w w w . uniso nic.co m.t w q w - r 5 0 2 - 8 5 3 . b ? test circ uits and wav e for m s 50k ? 300nf dut v ds 10v 12v cha r ge q gs q gd q g gate charge test circuit gate charge waveforms v gs v gs 200nf same type as du t 3ma 10v t p r g dut l v ds i d v dd unclamped inductive switching test circuit t p v dd i as bv ds s i d (t ) v ds (t) time e as = 2 1 li as 2 bv ds s bv dss -v dd unclamped inductive switching waveforms
5N25Z preliminar y power m o sfe unisonic technologi es co., ltd 5 of 6 w w w . uniso nic.co m.t w q w - r 5 0 2 - 8 5 3 . b ? t est circuits and wave form s(cont. ) v ds + - du t r g d v/d t co nt rolle d b y r g i sd con t rolle d by p u lse peri o d v dd same type as dut i sd v gs l driver v gs (driver) i sd (dut) v ds (dut) d= ga te pulse w i d t h gate pulse period 10 v di/d t body di od e re verse cu rren t i rm bo dy di ode reco very dv/dt v dd v sd bod y di od e fo rwa r d voltag e dro p i fm , bo dy dio de f o rw ard cu rren t pe ak dio de r e co very dv/dt te st ci rcuit an d wa veforms
5N25Z preliminar y power m o sfe unisonic technologi es co., ltd 6 of 6 w w w . uniso nic.co m.t w q w - r 5 0 2 - 8 5 3 . b u t c as s u m e s no r e s pon s i bility f o r equipm e n t f a il u r es th at r e s u lt f r om us ing pr oducts a t v a lue s that ex ceed, ev e n m o m entar ily , r a ted v a lues ( s uch a s m a x i m u m r a tings , oper ating condition r anges , or othe r par am eter s ) lis t ed in pr oducts s pecif ications of any and all u t c pr odu c t s des cr ibed or contained her ein. u t c pr oducts ar e not des igned f o r us e in lif e s upp or t appliances , dev i c es or s y s t e m s w her e m a l f unction of thes e pr o ducts can be r eas onably ex p ected to r es ult in per s onal injur y . r epr oduction in whole or in p a r t is p r ohibited w i thout the pr ior w r it t en cons ent of the copyr i ght ow n er . t he inf o r m ation pr es e n ted in this docum ent does not f o r m par t of any quotation or contr a ct, is believ e d to be accur a te and r e liable and m a y be changed w i thout notice.
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